Paper
2 March 2020 Highly efficient 9xx-nm band single emitter laser diodes optimized for high output power operation
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Proceedings Volume 11262, High-Power Diode Laser Technology XVIII; 1126203 (2020) https://doi.org/10.1117/12.2545721
Event: SPIE LASE, 2020, San Francisco, California, United States
Abstract
We report the highest power conversion efficiency (PCE) of 74.6% at peak and more than 70% PCE maintained up to high output power of 20W in broad stripe laser diodes (LDs) lasing at a 9xx-nm band. Optimal layer structure design including enhancement of asymmetry in waveguide structure and elimination of nonlinear resistance due to band discontinuity enables electric resistance to be reduced by 33% compared to conventional LDs without notable increase in optical internal loss. These PCE values from middle to high output power range marks the highest record reported so far.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuji Yamagata, Yoshikazu Kaifuchi, Ryozaburo Nogawa, Kyohei Yoshida, Rintaro Morohashi, and Masayuki Yamaguchi "Highly efficient 9xx-nm band single emitter laser diodes optimized for high output power operation", Proc. SPIE 11262, High-Power Diode Laser Technology XVIII, 1126203 (2 March 2020); https://doi.org/10.1117/12.2545721
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KEYWORDS
Resistance

Waveguides

Absorption

Doping

Semiconductor lasers

Reliability

Electroluminescence

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